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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10825732 B1

PDFFull Text
Date of Patent:
Nov. 03, 2020

Filed:

Jan. 07, 2020

Method of producing stresses in a semiconductor wafer

Applicant:

Siltectra Gmbh, Dresden, DE;

Inventors:

Lukas Lichtensteiger, Zurich, CH;

Wolfram Drescher, Dresden, DE;

Assignee:

Siltectra GmbH, Dresden, DE;

Attorney:

Murphy, Bilak & Homiller, PLLC

Primary Examiner:

Ratisha Mehta

Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 21/304 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7806 (2013.01); H01L 21/02002 (2013.01); H01L 21/304 (2013.01); H01L 21/67092 (2013.01); H01L 21/6835 (2013.01);
Abstract

A method of splitting a semiconductor wafer includes: inducing a first stress distribution in the semiconductor wafer by exposing the semiconductor wafer to a first radiation process; inducing a second stress distribution in the semiconductor wafer by exposing the semiconductor wafer to a second radiation process, the second radiation process including applying laser energy to an edge of the semiconductor wafer; and splitting the semiconductor wafer after inducing the first stress distribution and the second stress distribution.

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Lichtensteiger, Lukas. (2020). Method of producing stresses in a semiconductor wafer (U.S. Patent No. 10825732). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10825732

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