The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2020
Filed:
May. 29, 2020
Applicant:
Skc Co., Ltd., Suwon-si, KR;
Inventors:
Jong Hwi Park, Suwon-si, KR;
Myung-Ok Kyun, Suwon-si, KR;
Sang Ki Ko, Suwon-si, KR;
Kap-Ryeol Ku, Suwon-si, KR;
Jung-Gyu Kim, Suwon-si, KR;
Jongmin Shim, Hwaseong-si, KR;
Byung Kyu Jang, Suwon-si, KR;
Jung Woo Choi, Suwon-si, KR;
Assignee:
SKC Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 23/00 (2006.01); C30B 29/36 (2006.01); C30B 25/08 (2006.01); H01L 21/02 (2006.01); C30B 19/08 (2006.01); C30B 35/00 (2006.01); C30B 25/10 (2006.01);
U.S. Cl.
CPC ...
C30B 29/36 (2013.01); C30B 19/08 (2013.01); C30B 25/08 (2013.01); C30B 25/10 (2013.01); C30B 35/002 (2013.01); H01L 21/02002 (2013.01);
Abstract
A method for preparing a SiC ingot includes loading a composition of a raw material comprising a carbon source and a silicon source into a reactor; placing a plurality of seed crystal on one side of the reactor spaced apart from the composition; and sublimating the composition such that the SiC ingot grows from the plurality of seed crystal. A flow factor of the composition may be 5 to 35.