The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2020
Filed:
Mar. 10, 2016
Applicant:
Mitsubishi Materials Corporation, Tokyo, JP;
Inventors:
Assignee:
MITSUBISHI MATERIALS CORPORATION, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01); H01L 31/032 (2006.01); B22F 3/105 (2006.01); B22F 3/14 (2006.01); C22C 9/00 (2006.01); B22F 1/00 (2006.01);
U.S. Cl.
CPC ...
C23C 14/3414 (2013.01); B22F 3/105 (2013.01); B22F 3/14 (2013.01); C22C 9/00 (2013.01); C23C 14/34 (2013.01); H01L 31/0322 (2013.01); B22F 1/0014 (2013.01);
Abstract
A Cu—Ga alloy sputtering target of the present invention is made of a Cu—Ga alloy, in which a carbon concentration is 30 ppm by mass or lower. In an observed structure, an area ratio of crystal grains having a grain size of 10 μm or less is 5% to 50% and an area ratio of crystal grains having a grain size of 100 μm or more is 1% to 30%.