The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2020
Filed:
Mar. 19, 2019
Huazhong University of Science and Technology, Hubei, CN;
Shifeng Wen, Hubei, CN;
Peng Chen, Hubei, CN;
Chunze Yan, Hubei, CN;
Lei Yang, Hubei, CN;
Zhaoqing Li, Hubei, CN;
Hongzhi Wu, Hubei, CN;
Yusheng Shi, Hubei, CN;
Huazhong University of Science and Technology, Hubei, CN;
Abstract
The present disclosure belongs to the technical field of advanced manufacturing auxiliary equipment, and discloses an independently temperature-controlled high-temperature selective laser sintering frame structure, comprising a galvanometric laser scanning system, a powder feeding chamber, a forming chamber and a heat-insulating composite plate, and targeted optimization design is performed on the respective functional components. According to the invention, the independently temperature-controlled frame structure can simultaneously ensure the uniformity of the powder preheating temperature field of the powder feeding chamber platform and the uniformity of the processing temperature field of the forming chamber platform, so that powder on the powder feeding chamber platform can reach the sinterable temperature before being conveyed, and conveyance of cold powder to the sintered melt is avoided, thereby reducing the possibility of warpage of the parts while reducing actual sintering delay time and improving actual sintering efficiency. The independently temperature-controlled frame structure of the present disclosure is particularly suitable for high-temperature laser sintering of high-performance polymers such as polyaryletherketones and aromatic polyamides at 400° C.