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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10819102 B1

PDFFull Text
Date of Patent:
Oct. 27, 2020

Filed:

Jan. 05, 2018

Electronic circuit for fast temperature sensing of a power switching device

Applicant:

Power Integrations, Inc., San Jose, CA (US);

Inventor:

Robert Mayell, Los Altos, CA (US);

Assignee:

Power Integrations, Inc., San Jose, CA (US);

Attorney:

The Law Offices of Bradley J. Bereznak

Primary Examiner:

Jared Fureman

Assistant Examiner:

Nicolas Bellido

Int. Cl.
CPC ...
H02H 5/04 (2006.01); H01L 23/24 (2006.01); H01L 27/02 (2006.01); H02H 1/00 (2006.01); H01L 23/34 (2006.01); G01K 7/01 (2006.01); G01K 3/00 (2006.01); H03K 17/18 (2006.01); H03K 17/082 (2006.01); H01L 29/20 (2006.01); H01L 49/02 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01); H01L 29/808 (2006.01); H01L 27/06 (2006.01); H01L 29/778 (2006.01); H03K 17/08 (2006.01);
U.S. Cl.
CPC ...
H02H 5/044 (2013.01); G01K 3/005 (2013.01); G01K 7/01 (2013.01); H01L 23/34 (2013.01); H01L 27/0266 (2013.01); H02H 1/0007 (2013.01); H03K 17/0822 (2013.01); H03K 17/18 (2013.01); G01K 2217/00 (2013.01); H01L 27/0629 (2013.01); H01L 28/20 (2013.01); H01L 29/16 (2013.01); H01L 29/2003 (2013.01); H01L 29/778 (2013.01); H01L 29/78 (2013.01); H01L 29/808 (2013.01); H03K 2017/0806 (2013.01); H03K 2217/0027 (2013.01);
Abstract

An electronic circuit for sensing a temperature rise in a power transistor device, the temperature rise caused by a current flow in the power transistor device. The power transistor device and a sense-FET are disposed on a substrate. The sense-FET senses a fractional portion of the current flow and outputs a current signal. A JFET has its drain connected to the drain of the power transistor device. The gate of the JFET is connected to the source of the power transistor device, such that when the power transistor device is on, the JFET is also turned on, and a drain voltage signal of the power transistor device is output at a second node of the JFET. A detection circuit receives the drain voltage signal and the current signal and outputs an alarm signal when the drain-source resistance of the power transistor device exceeds a combined threshold limit.

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