The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2020

Filed:

Jul. 02, 2019
Applicant:

Panasonic Corporation, Kadoma-shi, Osaka, JP;

Inventors:

Daisuke Shibata, Kyoto, JP;

Satoshi Tamura, Osaka, JP;

Shinji Ujita, Osaka, JP;

Nanako Hirashita, Kyoto, JP;

Masahiro Ogawa, Osaka, JP;

Ryo Kajitani, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 21/00 (2006.01); H01L 31/16 (2006.01); H01L 23/00 (2006.01); H01L 33/38 (2010.01); H03K 17/0814 (2006.01); H03K 17/785 (2006.01); H01L 21/02 (2006.01); H01L 29/24 (2006.01); H01L 27/32 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/162 (2013.01); H01L 21/02579 (2013.01); H01L 24/48 (2013.01); H01L 27/3227 (2013.01); H01L 29/24 (2013.01); H01L 31/1856 (2013.01); H01L 33/382 (2013.01); H03K 17/08142 (2013.01); H03K 17/785 (2013.01); H01L 2224/48145 (2013.01); H01L 2224/48247 (2013.01); H01L 2227/32 (2013.01); H01L 2924/10344 (2013.01); H01L 2924/13091 (2013.01);
Abstract

A semiconductor relay includes: a light-emitting element; and a light-receiving element facing the light-emitting element. The light-receiving element includes: a substrate; a semiconductor layer having a direct transition type, the semiconductor layer being disposed on the substrate and having a semi-insulating property; a first electrode having at least a part in contact with the semiconductor layer; and a second electrode having at least a part in contact with either one of the semiconductor layer and the substrate, in a position separated from the first electrode. The semiconductor layer is reduced in resistance by absorbing light from the light-emitting element.


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