The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
Nov. 27, 2018
Applicant:
Ecole Polytechnique Federale DE Lausanne (Epfl), Lausanne, CH;
Inventors:
Assignee:
ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL), Lausanne, CH;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/768 (2006.01); H01L 27/092 (2006.01); H01L 21/8234 (2006.01); H01L 21/02 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/768 (2013.01); H01L 21/0226 (2013.01); H01L 21/02241 (2013.01); H01L 21/8238 (2013.01); H01L 21/823406 (2013.01); H01L 27/0922 (2013.01); H01L 29/66356 (2013.01); H01L 29/7391 (2013.01); H01L 29/165 (2013.01);
Abstract
A charge sensing device for sensing charge variations in a charge storage area includes: a TFET having at least one sense gate; and a capacitive coupling for coupling the charge storage area with the sense gate.