The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
Dec. 27, 2018
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Hsiang-Lan Lung, Ardsley, NY (US);
Erh-Kun Lai, Tarrytown, NY (US);
Ming-Hsiu Lee, Hsinchu, TW;
Chiao-Wen Yeh, Taipei, TW;
Assignee:
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01); G11C 8/14 (2006.01); G11C 7/18 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2481 (2013.01); G11C 7/18 (2013.01); G11C 8/14 (2013.01); G11C 13/0004 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/141 (2013.01); H01L 45/1616 (2013.01); H01L 45/1625 (2013.01); H01L 45/1675 (2013.01); G11C 2213/71 (2013.01);
Abstract
An integrated circuit includes a three-dimensional cross-point memory having a plurality of levels of memory cells disposed in cross points of first access lines and second access lines with alternating wide and narrow regions. The manufacturing process of the three-dimensional cross-point memory includes patterning with three patterns: a first pattern to define the memory cells, a second pattern to define the first access lines, and a third pattern to define the second access lines.