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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10818719 B1

PDFFull Text
Date of Patent:
Oct. 27, 2020

Filed:

Sep. 23, 2019

Semiconductor device with a radiation sensing region and method for forming the same

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Tsung-Han Tsai, Zhunan Township, TW;

Yun-Wei Cheng, Taipei, TW;

Kuo-Cheng Lee, Tainan, TW;

Chun-Hao Chou, Tainan, TW;

Yung-Lung Hsu, Tainan, TW;

Assignee:

Taiwan Semicondutor Manufacturing Co., Ltd., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Herve-Louis Y Assouman

Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1463 (2013.01); H01L 27/1462 (2013.01); H01L 27/1464 (2013.01); H01L 27/14654 (2013.01); H01L 27/14685 (2013.01); H01L 27/14689 (2013.01); H01L 27/14636 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate, a radiation-sensing region, at least one isolation structure, and a doped passivation layer. The radiation-sensing region is present in the semiconductor substrate. The isolation structure is present in the semiconductor substrate and adjacent to the radiation-sensing region. The doped passivation layer at least partially surrounds the isolation structure in a substantially conformal manner.

Find Patent Forward Citations

Tsai, Tsung-Han. (2020). Semiconductor device with a radiation sensing region and method for forming the same (U.S. Patent No. 10818719). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10818719

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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