The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
Mar. 13, 2017
Ricoh Company, Ltd., Tokyo, JP;
Yuji Sone, Kanagawa, JP;
Naoyuki Ueda, Kanagawa, JP;
Yuki Nakamura, Tokyo, JP;
Yukiko Abe, Kanagawa, JP;
Shinji Matsumoto, Kanagawa, JP;
Ryoichi Saotome, Kanagawa, JP;
Sadanori Arae, Kanagawa, JP;
Minehide Kusayanagi, Kanagawa, JP;
RICOH COMPANY, LTD., Tokyo, JP;
Abstract
A method for manufacturing a field effect transistor including a gate-insulating layer, an active layer, and a passivation layer. The method includes a first process of forming the gate-insulating layer; and a second process of forming the passivation layer. At least one of the first process and the second process includes: forming a first oxide containing an alkaline earth metal and at least one of gallium, scandium, yttrium, and a lanthanoid; and etching the first oxide by use of a first solution containing at least one of hydrochloric, acid, oxalic acid, nitric acid, phosphoric acid, acetic acid, sulfuric acid, and hydrogen peroxide water.