The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2020

Filed:

Aug. 16, 2019
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Jiun-Sheng Yang, Taichung, TW;

Noriaki Ikeda, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/10 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1085 (2013.01); H01L 27/10805 (2013.01);
Abstract

A memory device and a method for manufacturing the memory device are provided. The memory device includes an interlayer insulating layer formed on a substrate, a conductive contact plug formed in the interlayer insulating layer, a conductive barrier structure formed on the conductive contact plug, and a capacitor structure formed on the conductive barrier structure. The area of the top surface of the conductive contact plug is smaller than the area of the bottom surface of the conductive barrier structure, and the top surface of the conductive contact plug is completely covered by the bottom surface of the conductive barrier structure.


Find Patent Forward Citations

Yang, Jiun-Sheng. (2020). Memory device and method for manufacturing the same (U.S. Patent No. 10818670). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10818670

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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