The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2020

Filed:

Nov. 29, 2018
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventor:

Hideo Eto, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/683 (2006.01); H01J 37/32 (2006.01); H01L 21/3065 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/6833 (2013.01); H01J 37/3244 (2013.01); H01J 37/32082 (2013.01); H01J 37/32091 (2013.01); H01J 37/32174 (2013.01); H01J 37/32715 (2013.01); H01L 21/3065 (2013.01); H01L 21/67069 (2013.01); H01J 2237/334 (2013.01);
Abstract

According to one embodiment, a plasma processing-apparatus processing object support platform includes a lower plate, an upper plate, and a variable condenser. The lower plate is electrically conductive. The upper plate is provided on the lower plate. A processing object is placed on an upper surface of the upper plate. The variable condenser is provided along a circumferential direction of the lower plate in a region at an upper outer circumferential vicinity of the lower plate. The region has an annular configuration. The variable condenser includes a first capacitance element and a second capacitance element disposed respectively on an inner circumferential side and an outer circumferential side in the region having the annular configuration. Mutually-different control voltages are suppliable to the first capacitance element and the second capacitance element.


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