The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
Jan. 27, 2020
Tokyo Electron Limited, Tokyo, JP;
Omid Zandi, Austin, TX (US);
Jacques Faguet, Austin, TX (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
Methods and systems herein enable selective removal of ruthenium (Ru) metal at high throughput, and without potentially damaging effects of plasma. Techniques include a photo-assisted chemical vapor etch (PCVE) method to selectively remove Ru metal as a volatile species. A substrate with ruthenium surfaces is positioned within a processing chamber. A photo-oxidizer is received in vapor form in the processing chamber. The photo-oxidizer is a species that generates reactive oxygen species in response to actinic radiation. Reactive oxygen species are then generated by irradiation of the photo-oxidizer, such as with ultraviolet radiation. The reactive oxygen species react with ruthenium surfaces causing the ruthenium surfaces to become oxidized. Oxidized ruthenium is then removed from the substrate, such as be vaporization.