The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2020

Filed:

Oct. 17, 2018
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventor:

Yi-Jen Lo, New Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/0206 (2013.01); H01L 21/31116 (2013.01);
Abstract

The present disclosure provides a method for preparing semiconductor structures. The method includes steps of providing a stack structure, wherein the stack structure comprises a nitride layer, a first layer, a stop layer, a second layer, and a first oxide layer stacked in sequence; forming a third layer on the first oxide layer; patterning the third layer to obtain a line-and-space pattern comprising a plurality of first lines and a plurality of first spaces; forming a second oxide layer on the line-and-space pattern; removing the second oxide layer on the first lines; removing the first lines to form a plurality of second spaces; and etching the first oxide layer, the second layer, and the stop layer via the second spaces to form a plurality of second lines.


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