The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
Mar. 25, 2019
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Blaise Fanning, Folsom, CA (US);
Shekoufeh Qawami, El Dorado Hills, CA (US);
Raymond S. Tetrick, Portland, OR (US);
Frank T. Hady, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/00 (2006.01); G06F 3/06 (2006.01); G06F 12/02 (2006.01); G06F 12/10 (2016.01); G06F 12/08 (2016.01); G11C 16/00 (2006.01); G11C 7/10 (2006.01); G06F 12/1009 (2016.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0644 (2013.01); G06F 3/0604 (2013.01); G06F 3/0631 (2013.01); G06F 3/0679 (2013.01); G06F 3/0688 (2013.01); G06F 12/023 (2013.01); G06F 12/0238 (2013.01); G06F 12/0246 (2013.01); G06F 12/08 (2013.01); G06F 12/10 (2013.01); G06F 12/1009 (2013.01); G11C 7/1006 (2013.01); G11C 16/00 (2013.01); G06F 2212/205 (2013.01); G06F 2212/2024 (2013.01); G06F 2212/7201 (2013.01); G06F 2212/7204 (2013.01); G11C 11/56 (2013.01); Y02D 10/13 (2018.01);
Abstract
Examples of a multi-level memory with direct access are described. Examples include designating an amount of a non-volatile random access memory (NVRAM) for use as memory for a computer system. Examples also include designating a second amount of the NVRAM to for use as storage for the computing device. Examples also include re-designating at least a first portion of the first amount of NVRAM from use as memory to use as storage.