The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
Sep. 08, 2016
Shanghai Ic R&d Center Co., Ltd., Shanghai, CN;
Xiaoxu Kang, Shanghai, CN;
SHANGHAI IC R&D CENTER CO., LTD, Shanghai, CN;
Abstract
The present invention provides an infrared detector pixel structure and manufacturing method thereof. The bottom portion of a silicon substrate is bonded with a bonding substrate, an infrared absorbing layer in the bonding substrate is used for absorbing a part of infrared light, a closed cavity filled with infrared-sensitive gas is set in the silicon substrate, and a piezoelectric transforming unit is bonded onto the closed cavity. When the infrared-sensitive gas absorbs the infrared light to expand, the infrared sensitive gas will press the piezoelectric transforming unit, which causes piezoelectric signal generated by the piezoelectric transforming unit to be changed, thereby achieving the detection on the infrared light.