The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2020

Filed:

Jul. 24, 2019
Applicants:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;

Inventors:

Chao Zheng, Shanghai, CN;

Wei Wang, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81B 3/00 (2006.01); B81B 7/00 (2006.01); B81C 1/00 (2006.01); B81B 7/02 (2006.01);
U.S. Cl.
CPC ...
B81B 3/0086 (2013.01); B81B 7/0006 (2013.01); B81C 1/00357 (2013.01); B81C 1/00523 (2013.01); B81C 1/00698 (2013.01); B81B 2201/0257 (2013.01); B81B 2203/04 (2013.01); B81B 2207/07 (2013.01);
Abstract

A method of manufacturing a semiconductor device includes providing a semiconductor structure having a bottom substrate, a sacrificial layer on the bottom substrate, and a top substrate on the sacrificial layer. The sacrificial layer has a first opening exposing a first portion of the bottom substrate and a second opening exposing a second portion of the bottom substrate. The method further includes forming a first metal layer on the top substrate and/or on the exposed first portion of the bottom substrate, forming an adhesive layer on the first metal layer, and forming a second metal layer on the adhesive layer defining one or more pads.


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