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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10812035 B1

PDFFull Text
Date of Patent:
Oct. 20, 2020

Filed:

Sep. 12, 2018

Saw device and method of manufacture

Applicant:

Spts Technologies Limited, Newport, GB;

Inventors:

Rhonda Hyndman, Newport, GB;

Steve Burgess, Newport, GB;

Assignee:

SPTS Technologies Limited, Newport, GB;

Attorney:

Hodgson Russ LLP

Primary Examiner:

Rakesh B Patel

Assistant Examiner:

Jorge L Salazar, Jr

Int. Cl.
CPC ...
H03H 3/10 (2006.01); H03H 9/25 (2006.01); C23C 14/08 (2006.01); C23C 14/34 (2006.01); C23C 14/35 (2006.01); H03H 9/02 (2006.01); H03H 9/145 (2006.01); H03H 9/64 (2006.01); H01L 41/053 (2006.01); H01L 41/23 (2013.01); C23C 14/10 (2006.01); C23C 14/54 (2006.01); H03H 3/08 (2006.01); C23C 14/00 (2006.01); H03H 3/04 (2006.01);
U.S. Cl.
CPC ...
H03H 3/10 (2013.01); C23C 14/0036 (2013.01); C23C 14/08 (2013.01); C23C 14/10 (2013.01); C23C 14/345 (2013.01); C23C 14/3485 (2013.01); C23C 14/35 (2013.01); C23C 14/545 (2013.01); H01L 41/053 (2013.01); H01L 41/23 (2013.01); H03H 3/08 (2013.01); H03H 9/02 (2013.01); H03H 9/02559 (2013.01); H03H 9/02834 (2013.01); H03H 9/145 (2013.01); H03H 9/14544 (2013.01); H03H 9/25 (2013.01); H03H 9/6489 (2013.01); H03H 9/64 (2013.01); H03H 2003/0442 (2013.01);
Abstract

A method of reducing non-uniformity in the resonance frequencies of a surface acoustic wave (SAW) device, the SAW device comprising a silicon oxide layer comprising an oxide of silicon deposited over interdigital transducers on a piezoelectric substrate by reactive sputtering. The method comprises positioning a piezoelectric substrate having interdigital transducers on a substrate support, then depositing a silicon oxide layer comprising an oxide of silicon over the piezoelectric substrate and the interdigital transducers to form a SAW device. The substrate support is positioned relative to a sputtering target so that the silicon oxide layer of the SAW device has an arithmetic mean surface roughness (R) of 11 angstroms or less.

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