The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2020
Filed:
Nov. 28, 2017
Applicant:
Stmicroelectronics International N.v., Schiphol, NL;
Inventors:
Vicky Batra, New Delhi, IN;
Radhakrishnan Sithanandam, Greater Noida, IN;
Assignee:
STMicroelectronics International N.V., Schiphol, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 9/04 (2006.01); H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 23/528 (2006.01); H02H 9/00 (2006.01); H01L 27/04 (2006.01); H02H 3/22 (2006.01);
U.S. Cl.
CPC ...
H02H 9/046 (2013.01); H01L 27/0255 (2013.01); H01L 27/0266 (2013.01); H01L 27/0285 (2013.01); H01L 27/0288 (2013.01); H01L 27/0629 (2013.01); H01L 23/5286 (2013.01); H01L 27/04 (2013.01); H01L 27/06 (2013.01); H02H 3/22 (2013.01); H02H 9/00 (2013.01); H02H 9/04 (2013.01);
Abstract
Electrostatic discharge (ESD) protection is provided in using a supply clamp circuit formed by an ESD event actuated transistor device. A bias current is generated in response to operation of a voltage independent current generator circuit. The bias current is sourced to ensure that the transistor device is deactuated after the ESD event is dissipated.