The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2020

Filed:

Apr. 24, 2019
Applicant:

Wuhan Xinxin Semiconductor Manufacturing Co., Ltd., Wuhan, Hubei, CN;

Inventor:

Tian Zeng, Hubei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 25/065 (2006.01); H01L 23/31 (2006.01); H01L 23/532 (2006.01); H01L 29/06 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/762 (2013.01); H01L 21/76805 (2013.01); H01L 21/76897 (2013.01); H01L 21/76898 (2013.01); H01L 23/3171 (2013.01); H01L 23/5226 (2013.01); H01L 23/53228 (2013.01); H01L 25/0657 (2013.01); H01L 29/0649 (2013.01);
Abstract

A semiconductor device and a manufacturing method thereof are disclosed. In which a uniform metal layer is formed above the second metal layer of the second wafer, the uniform metal layer is electrically connected to the second metal layer, and the uniform metal layer and the first metal layer are made of the same material. The uniform metal layer and the first metal layer simultaneously exposed by the subsequently formed TSV hole are made of the same material, the degree of over-etching is relatively easy to control in the etching process, and cross contamination of cleaning agents in the cleaning process can be avoided. In addition, when the interconnection layer is electrically connected to the first metal layer and the uniform metal layer, since the uniform metal layer and the first metal layer are made of the same material, the interconnection layer has better contact performance with the two.


Find Patent Forward Citations

Zeng, Tian. (2020). Semiconductor device and manufacturing method thereof (U.S. Patent No. 10811339). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10811339

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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