The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2020
Filed:
Jan. 10, 2019
Nanya Technology Corporation, New Taipei, TW;
Shing-Yih Shih, New Taipei, TW;
Chih-Ching Lin, Taoyuan, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Abstract
A method of forming a semiconductor structure includes the following steps. A dielectric layer is formed over a conductive line. A patterned photoresist layer is formed over the dielectric layer, wherein the patterned photoresist layer has an opening exposing the dielectric layer. The dielectric layer is etched to form a via hole in the dielectric layer using the patterned photoresist layer as an etch mask. The opening of the patterned photoresist layer is laterally expanded. After the opening of the patterned photoresist layer is laterally expanded, the dielectric layer is etched to expand the via hole using the patterned photoresist layer as an etch mask. A conductive via is formed in the expanded via hole.