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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10811252 B1

PDFFull Text
Date of Patent:
Oct. 20, 2020

Filed:

Aug. 30, 2018

Pattern-forming method

Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventors:

Ryosuke Yamamoto, Nagoya Aichi, JP;

Ryuichi Saito, Kawasaki Kanagawa, JP;

Seiji Morita, Tokyo, JP;

Ryoichi Suzuki, Yokohama Kanagawa, JP;

Takeharu Motokawa, Zushi Kanagawa, JP;

Shinichi Ito, Yokohama Kanagawa, JP;

Soichi Inoue, Yokohama Kanagawa, JP;

Assignee:

TOSHIBA MEMORY CORPORATION, Tokyo, JP;

Attorney:

Kim & Stewart LLP

Primary Examiner:

Mounir S Amer

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01); H05K 3/12 (2006.01); G03F 7/40 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 27/115 (2017.01); G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02282 (2013.01); G03F 7/0002 (2013.01); G03F 7/40 (2013.01); G03F 7/405 (2013.01); H01L 21/0273 (2013.01); H01L 21/0276 (2013.01); H01L 21/02115 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/31058 (2013.01); H01L 21/31144 (2013.01); H01L 27/115 (2013.01); H05K 3/1258 (2013.01);
Abstract

A pattern-forming method includes forming a first film above a material to be processed, processing the first film into a pattern to be formed in the material to be processed, providing a second film on the first film and the material to be processed, supplying a precursor containing at least one of a metal material or a semiconductor material to the second film, removing the first film, and processing the material to be processed using the second film impregnated with at least one of the metal material and the semiconductor material, as a mask.

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