The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2020

Filed:

Jan. 27, 2020
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventor:

Raija H. Matero, Helsinki, FI;

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/455 (2006.01); C23C 16/40 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02172 (2013.01); C23C 16/40 (2013.01); C23C 16/45525 (2013.01); H01L 21/0228 (2013.01); H01L 21/02112 (2013.01); H01L 21/02205 (2013.01); H01L 21/02301 (2013.01); H01L 21/02304 (2013.01); H01L 29/785 (2013.01);
Abstract

Atomic layer deposition processes for forming germanium oxide thin films are provided. In some embodiments the ALD processes can include the following: contacting the substrate with a vapor phase tetravalent Ge precursor such that at most a molecular monolayer of the Ge precursor is formed on the substrate surface; removing excess Ge precursor and reaction by products, if any; contacting the substrate with a vapor phase oxygen precursor that reacts with the Ge precursor on the substrate surface; removing excess oxygen precursor and any gaseous by-products, and repeating the contacting and removing steps until a germanium oxide thin film of the desired thickness has been formed.


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