The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2020

Filed:

May. 25, 2018
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventor:

Wen-Chiao Ho, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G11C 16/08 (2006.01); G11C 16/24 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 16/08 (2013.01); G11C 16/24 (2013.01); G11C 16/0483 (2013.01);
Abstract

A flash memory storage apparatus and a reading method thereof are provided. The flash memory storage apparatus includes a memory cell array and a memory control circuit. The memory cell array includes at least one memory cell string coupled between a bit line and a source line. The memory control circuit is coupled to the memory cell array and configured to control a read operation of the memory cell array during the reading period. The reading period includes a pre-charge period and a discharge period. The source line performs a pre-charge operation on the bit line via a signal transmission path during the pre-charge period. The bit line performs a discharge operation on the source line via the same signal transmission path during the discharge period. The signal transmission path includes the memory cell string.


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Ho, Wen-Chiao. (2020). Flash memory storage apparatus and reading method thereof (U.S. Patent No. 10811102). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10811102

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