The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2020
Filed:
Dec. 12, 2019
Avalanche Technology, Inc., Fremont, CA (US);
Parviz Keshtbod, Los Altos Hills, CA (US);
Ebrahim Abedifard, San Jose, CA (US);
Avalanche Technology, Inc., Fremont, CA (US);
Abstract
The present invention is directed to a method for programming a memory cell that includes a transistor and a memory element coupled in series between a first conductive line and a second conductive line. The method includes the steps of applying a voltage across the memory cell with the voltage being sufficiently high to enable switching of the memory element from initial resistance state to target resistance state; determining the initial resistance state of the memory element; comparing the initial resistance state with the target resistance state; and if the initial resistance state and the target resistance state are same, concluding that the memory element is already in the target resistance state and terminating programming process; otherwise, continually monitoring the voltage until a change in the voltage is detected and then concluding that the memory element has switched to the target resistance state and terminating the programming process.