The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2020
Filed:
Aug. 14, 2019
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventor:
Harish N. Venkata, Allen, TX (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 7/08 (2006.01); G11C 7/10 (2006.01); G11C 11/4091 (2006.01);
U.S. Cl.
CPC ...
G11C 7/08 (2013.01); G11C 7/1063 (2013.01); G11C 7/1069 (2013.01); G11C 11/4091 (2013.01);
Abstract
Memory devices may employ flip-flops with paired transistors in sense amplifying circuitry to sense charges stored in memory cells to perform read and/or activate operations. Sense amplifying circuitry may employ driving devices in driving circuitry to latch the read memory to a high or low voltage. Embodiments include systems and methods that facilitate reduced memory devices with faster memory cell restore by sharing the driving circuitry in different sense amplifying modules. Embodiments may employ switching circuitry in the sense amplifying circuitry to prevent unintentional or faulty readouts.