Reduced die size and improved memory cell restore using shared common source driver

Abstract

Memory devices may employ flip-flops with paired transistors in sense amplifying circuitry to sense charges stored in memory cells to perform read and/or activate operations. Sense amplifying circuitry may employ driving devices in driving circuitry to latch the read memory to a high or low voltage. Embodiments include systems and methods that facilitate reduced memory devices with faster memory cell restore by sharing the driving circuitry in different sense amplifying modules. Embodiments may employ switching circuitry in the sense amplifying circuitry to prevent unintentional or faulty readouts.