The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2020

Filed:

Mar. 27, 2019
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Takayori Hamada, Tokyo, JP;

Yasuhiko Tanuma, Tokyo, JP;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/06 (2006.01); G11C 7/10 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
G11C 5/063 (2013.01); G11C 7/1084 (2013.01); H01L 23/5226 (2013.01);
Abstract

Semiconductor devices and systems include semiconductor devices with first signal traces conveying a first power signal, second signal traces conveying a second power signal, and third signal traces conveying a third power signal. Each of the power signals are connected on a redistribution layer, a first wiring layer, and first-layer contacts. At least one of the first signal traces on the redistribution layer includes a cutout region and the third signal traces include a bypass structure on the redistribution layer and within the cutout region. The bypass structure conveys the third power signal on the redistribution layer around the first-layer contacts coupled to the first signal traces on the redistribution layer.


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