The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2020

Filed:

Apr. 24, 2019
Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;

Inventors:

Chan-Hong Chern, Palo Alto, CA (US);

Chu Fu Chen, Hsinchu County, TW;

Chun Lin Tsai, Hsinchu, TW;

Mark Chen, Hsinchu County, TW;

King-Yuen Wong, Tuen Mun, HK;

Ming-Cheng Lin, Hsinchu, TW;

Tysh-Bin Lin, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/00 (2006.01); H03K 17/06 (2006.01); H03K 17/687 (2006.01); H02M 3/07 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H03K 17/6877 (2013.01); H01L 23/3107 (2013.01); H02M 3/07 (2013.01); H03K 17/063 (2013.01); H03K 2217/0036 (2013.01); H03K 2217/0081 (2013.01);
Abstract

Devices are described herein for a low static current semiconductor device. A semiconductor device includes a power transistor and a driving circuit coupled to and configured to drive the power transistor. The driving circuit includes a first stage having an enhancement-mode high-electron-mobility transistor (HEMT) and a second stage that is coupled between the first stage and the power transistor and that includes a pair of enhancement-mode HEMTs.


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