The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2020

Filed:

Sep. 20, 2018
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Yu-Hsing Chang, Taipei, TW;

Chern-Yow Hsu, Hsin-Chu County, TW;

Shih-Chang Liu, Kaohsiung County, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/94 (2006.01); H01L 21/027 (2006.01); H01L 23/522 (2006.01); H01L 49/02 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 29/94 (2013.01); H01L 21/0271 (2013.01); H01L 21/76877 (2013.01); H01L 23/5223 (2013.01); H01L 28/40 (2013.01); H01L 28/87 (2013.01);
Abstract

A semiconductor device includes a capacitive device, a first conductive via, and a second conductive via. The capacitive device includes a first conductive plate, a first insulating plate, a second conductive plate, a second insulating plate, and a third conductive plate. The first conductive via is electrically coupled to the first conductive plate and the third conductive plate, and the first conductive via penetrated through a first film stack with a first thickness. The second conductive via is electrically coupled to the second conductive plate, and the second conductive via penetrated through a second film stack with a second thickness. The second thickness is substantially equal to the first thickness.


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