The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2020
Filed:
Apr. 28, 2017
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Toshiaki Kitano, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/812 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66462 (2013.01); H01L 29/2003 (2013.01); H01L 29/778 (2013.01); H01L 29/812 (2013.01);
Abstract
A nitride semiconductor layer () is provided on a Si substrate (). A gate electrode (), a source electrode () and a drain electrode () are provided on the nitride semiconductor layer (). A P-type conductive layer () in contact with the nitride semiconductor layer () is provided on the Si substrate () below the drain electrode ().