The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2020
Filed:
Jul. 30, 2018
International Business Machines Corporation, Armonk, NY (US);
Ruqiang Bao, Niskayuna, NY (US);
Junli Wang, Slingerlands, NY (US);
Dechao Guo, Niskayuna, NY (US);
Heng Wu, Guilderland, NY (US);
Ernest Y. Wu, Essex Junction, VT (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
Techniques for fabricating a semiconductor device having a two-part spacer. In one embodiment, a device is provided that comprises a spacer having a first portion and a second portion, where the first portion comprises one or more layers and the second portion comprises a dielectric material. In one or more implementations, the device further comprises an isolation layer coupled to the spacer, where the isolation layer comprises a silicon oxide material. In one or implementation, the device can further comprise a gate structure formed on a substrate, where the gate structure comprises a polysilicon contact portion, a first silicon dioxide portion, a silicon nitride portion and a second silicon dioxide portion.