The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2020
Filed:
Nov. 02, 2018
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventors:
Hyangkeun Yoo, Icheon-si, KR;
Yong Soo Choi, Seongnam-si, KR;
Assignee:
SK HYNIX INC., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/1159 (2017.01); G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1159 (2013.01); G11C 11/223 (2013.01);
Abstract
In an embodiment, a ferroelectric memory device includes a semiconductor substrate, a first ferroelectric memory cell transistor of NMOS type disposed in a first region of the semiconductor substrate, and a second ferroelectric memory cell transistor of PMOS type disposed in a second region adjacent to the first region of the semiconductor substrate. A first gate electrode layer of the first ferroelectric memory cell transistor and a second gate electrode layer of the second ferroelectric memory cell transistor are electrically connected to each other.