The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2020

Filed:

Sep. 05, 2018
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Khaled Hasnat, San Jose, CA (US);

Prashant Majhi, San Jose, CA (US);

Deepak Thimmegowda, Fremont, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11529 (2017.01); H01L 27/11573 (2017.01); H01L 29/786 (2006.01); H01L 27/11531 (2017.01); H01L 27/11582 (2017.01); H01L 27/11524 (2017.01); H01L 27/1157 (2017.01); H01L 27/11556 (2017.01); H01L 27/11565 (2017.01); H01L 27/11575 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11529 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01); H01L 27/11531 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01); H01L 27/11573 (2013.01); H01L 27/11575 (2013.01); H01L 27/11582 (2013.01); H01L 29/7869 (2013.01); H01L 29/78642 (2013.01);
Abstract

Embodiments of the present disclosure are directed towards a memory device with vertical string drivers, in accordance with some embodiments. In one embodiment, the memory device includes a plurality of wordlines formed in a stack of multiple tiers. The device further includes a semiconductor layer disposed on top of the plurality of wordlines. The device further includes a plurality of string drivers disposed in the semiconductor layer substantially perpendicular to the tier stack of the plurality of wordlines. The semiconductor layer provides respective gate connections for the plurality of string drivers. In some embodiments, the semiconductor layer may be fabricated of polysilicon. Other embodiments may be described and/or claimed.


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