The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2020

Filed:

Nov. 16, 2018
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Juergen Pille, Stuttgart, DE;

Albert Frisch, Stuttgart, DE;

Tobias Werner, Weil im Schoenbuch, DE;

Rolf Sautter, Bondorf, DE;

Dieter Wendel, Woernitz, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 29/06 (2006.01); H03K 19/20 (2006.01); H01L 27/02 (2006.01); H01L 23/535 (2006.01); H01L 23/528 (2006.01); H01L 21/822 (2006.01); H01L 29/78 (2006.01); H03K 19/0948 (2006.01); H01L 27/11 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/092 (2013.01); H01L 21/8221 (2013.01); H01L 21/823871 (2013.01); H01L 21/823885 (2013.01); H01L 23/5286 (2013.01); H01L 23/535 (2013.01); H01L 27/0207 (2013.01); H01L 27/1104 (2013.01); H01L 29/0676 (2013.01); H01L 29/7827 (2013.01); H03K 19/0948 (2013.01); H03K 19/20 (2013.01); H01L 21/823807 (2013.01); H01L 29/42392 (2013.01);
Abstract

An embodiment may include a microelectronic device. The microelectronic device may include a first pair of transistors stacked vertically and connected in series. Each of the first pair of transistors are of the same type. The microelectronic device may include a second pair of transistors connected in parallel. The second pair of transistors being a different type than the first pair of transistors. The first pair of transistors and the second pair of transistors are arranged substantially perpendicular to the plurality of layers.


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