The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2020
Filed:
Oct. 22, 2018
Applicants:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Inventors:
Assignees:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/367 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 23/532 (2006.01); H01L 29/51 (2006.01); H01L 27/092 (2006.01); H01L 21/762 (2006.01); H01L 23/522 (2006.01); H01L 29/49 (2006.01); H01L 23/373 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3677 (2013.01); H01L 21/76224 (2013.01); H01L 23/5226 (2013.01); H01L 23/53295 (2013.01); H01L 27/0924 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01); H01L 29/785 (2013.01); H01L 23/373 (2013.01); H01L 23/3731 (2013.01); H01L 23/3732 (2013.01); H01L 23/3736 (2013.01); H01L 29/165 (2013.01); H01L 29/7848 (2013.01);
Abstract
A device includes a non-insulator structure, a first ILD layer, a first thermal via, and a first electrical via. The first ILD is over the non-insulator structure. The first thermal via is through the first ILD layer and in contact with the non-insulator structure. The first electrical via is through the first ILD layer and in contact with the non-insulator structure. The first thermal via and the first electrical via have different materials and the same height.