The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2020
Filed:
Feb. 21, 2019
Win Semiconductors Corp., Tao Yuan, TW;
The Chemours Company Fc, Llc, Wilmington, DE (US);
Ray Chen, Tao Yuan, TW;
Xudong Chen, Tao Yuan, TW;
Shih-Hui Huang, Tao Yuan, TW;
Liang-Feng Shen, Tao Yuan, TW;
Gin Tsai, Tao Yuan, TW;
Walter Tony Wohlmuth, Tao Yuan, TW;
WIN Semiconductors Corp., Taoyuan, TW;
The Chemours Company FC, LLC, Wilmington, DE (US);
Abstract
A low stress moisture resistant structure of semiconductor device comprises a low stress moisture resistant layer, wherein a semiconductor device is formed on a semiconductor wafer, the semiconductor device comprises at least one pad, the low stress moisture resistant layer is coated on the semiconductor device and the semiconductor wafer so that a pad top center surface of the pad is exposed. The low stress moisture resistant layer comprises a material comprising crosslinked fluoropolymer. A before-coated stress measured on the semiconductor wafer before the low stress moisture resistant layer is coated and an after-cured stress measured on the semiconductor wafer after the low stress moisture resistant layer is coated and cured define a stress difference, the stress difference is greater than or equal to −5×10dyne/cmand less than or equal to 5×10dyne/cm.