The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2020
Filed:
Jun. 19, 2018
Applicant:
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Inventor:
Guowei Zhang, Singapore, SG;
Assignee:
GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore, SG;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 27/092 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7835 (2013.01); H01L 27/092 (2013.01); H01L 29/402 (2013.01); H01L 29/42368 (2013.01); H01L 29/42376 (2013.01); H01L 29/66659 (2013.01); H01L 29/7834 (2013.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a laterally diffused MOSFET (LDMOS) and methods of manufacture. The structure includes: a gate structure having a drain region and a source region; and an oxidation extending from the gate structure to the drain region of the gate structure, the oxidation comprising a thinner oxide portion and a thicker oxide portion.