The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2020
Filed:
Jul. 16, 2018
Applicant:
Stmicroelectronics (Rousset) Sas, Rousset, FR;
Inventors:
Julien Delalleau, Marseilles, FR;
Christian Rivero, Rousset, FR;
Assignee:
STMicroelectronics (Rousset) SAS, Rousset, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66598 (2013.01); H01L 21/28114 (2013.01); H01L 21/28132 (2013.01); H01L 29/42372 (2013.01); H01L 29/42376 (2013.01); H01L 29/6656 (2013.01); H01L 29/7836 (2013.01);
Abstract
A MOS transistor is produced on and in an active zone and included a source region and a drain region. The active zone has a width measured transversely to a source-drain direction. A conductive gate region of the MOS transistor includes a central zone and, at a foot of the central zone, at least one stair that extends beyond the central zone along at least an entirety of the width of the active zone.