The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2020

Filed:

Nov. 07, 2018
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Wei-Che Chang, Taichung, TW;

Tzu-Ming Ou Yang, Tainan, TW;

Assignee:

Winbond Electronic Corp., Taichung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10885 (2013.01); H01L 21/0337 (2013.01); H01L 27/10888 (2013.01);
Abstract

A semiconductor device and a method for manufacturing the same are provided. The method includes forming a plurality of bit line structures on a semiconductor substrate, wherein there is a plurality of trenches between the bit line structures. The method also includes forming a first oxide layer conformally covering the bit line structures and the trenches, and forming a photoresist material layer in the trenches and on the first oxide layer, wherein the photoresist material layer has an etch selectivity that is higher than that of the first oxide layer. The method further includes removing the photoresist material layer to form a plurality of capacitor contact holes between the bit line structures, and forming a capacitor contact in the capacitor contact holes.


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