The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2020
Filed:
Dec. 17, 2018
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 21/225 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0921 (2013.01); H01L 21/2255 (2013.01); H01L 21/823807 (2013.01); H01L 21/823821 (2013.01); H01L 21/823878 (2013.01); H01L 21/823892 (2013.01); H01L 27/0924 (2013.01); H01L 29/0653 (2013.01); H01L 29/1054 (2013.01); H01L 29/1083 (2013.01); H01L 29/66795 (2013.01); H01L 29/66803 (2013.01); H01L 29/785 (2013.01); H01L 29/7849 (2013.01);
Abstract
A semiconductor device includes a substrate, an isolation structure over the substrate, and a first semiconductor layer over the substrate. At least a portion of the first semiconductor layer is surrounded by the isolation structure. The semiconductor device further includes a doped material layer between the isolation structure and the first semiconductor layer.