The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2020
Filed:
Apr. 10, 2019
Gan Systems Inc., Ottawa, CA;
Thomas Macelwee, Nepean, CA;
GaN Systems Inc., Ottawa, CA;
Abstract
Embedded packaging for high voltage, high temperature operation of power semiconductor devices is disclosed, wherein a semiconductor die is embedded in a dielectric body comprising a dielectric polymer composition characterized by a conductivity transition temperature Tc, a first activation energy Eafor conduction in a temperature range below Tc, and a second activation energy Eafor conduction in a temperature range above Tc. A test methodology is disclosed for selecting a dielectric epoxy composition having values of Tc, Eaand Eathat provide a conduction value below a required reliability threshold, e.g. ≤5×10S/cm, for a specified operating voltage and temperature. For example, the power semiconductor device comprises a GaN HEMT for operation at >100V wherein the package body is formed from a laminated dielectric epoxy composition for operation at >150 C, wherein Tc is ≥75 C, Eais ≤0.2 eV and Eais ≤1 eV, for improved reliability for high voltage, high temperature operation.