The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2020
Filed:
Dec. 19, 2016
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Yuan-Shun Chao, Zhubei, TW;
Chih-Wei Kuo, Tainan, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/44 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 21/285 (2006.01); H01L 29/08 (2006.01); H01L 29/26 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 21/44 (2013.01); H01L 21/28518 (2013.01); H01L 29/0847 (2013.01); H01L 29/26 (2013.01); H01L 29/41791 (2013.01); H01L 29/45 (2013.01); H01L 29/66795 (2013.01); H01L 29/66969 (2013.01); H01L 29/785 (2013.01); H01L 29/7848 (2013.01); H01L 2029/7858 (2013.01);
Abstract
In a method of manufacturing a semiconductor device, a first layer containing a SiGelayer doped with phosphorous is formed over an n-type semiconductor layer, a metal layer containing a metal material is formed over the first layer, and a thermal process is performed to form an alloy layer including Si, Ge and the metal material.