The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2020

Filed:

Sep. 25, 2018
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Nicholas A. Lanzillo, Troy, NY (US);

Benjamin D. Briggs, Waterford, NY (US);

Michael Rizzolo, Albany, NY (US);

Theodorus E. Standaert, Clifton Park, NY (US);

Lawrence A. Clevenger, Saratoga Springs, NY (US);

James Stathis, Poughquag, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01F 10/32 (2006.01); H01L 43/02 (2006.01); H01L 43/12 (2006.01); H01F 41/34 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01F 10/3259 (2013.01); H01F 41/34 (2013.01); H01L 43/02 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01); H01F 10/329 (2013.01); H01F 10/3286 (2013.01);
Abstract

An electrical device structure including a magnetic tunnel junction structure having a first tunnel junction dielectric layer positioned between a free magnetization layer and a fixed magnetization layer. A magnetization enhancement stack present on the magnetic tunnel junction structure. The magnetization enhancement stack includes a second tunnel junction layer that is in contact with the free magnetization layer of the magnetic tunnel junction structure, a metal contact layer present on the second tunnel junction layer, and a metal electrode layer present on the metal contact layer. A metallic ring on a sidewall of the magnetic enhancement stack, wherein a base of the metallic ring may be in contact with the free magnetization layer of the magnetic tunnel junction structure.


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