The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10795257 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 06, 2020

Filed:

May. 23, 2017
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Raluca Tiron, Saint-Martin-le-Vinoux, FR;

Nicolas Posseme, Sassenage, FR;

Xavier Chevalier, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); G03F 7/004 (2006.01); G03F 7/075 (2006.01); G03F 7/11 (2006.01); H01L 21/311 (2006.01); H01L 21/033 (2006.01); B81C 1/00 (2006.01); H01L 21/3115 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0002 (2013.01); G03F 7/0035 (2013.01); G03F 7/0041 (2013.01); G03F 7/0048 (2013.01); G03F 7/0752 (2013.01); G03F 7/11 (2013.01); H01L 21/0337 (2013.01); H01L 21/31105 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01L 21/31127 (2013.01); H01L 21/31133 (2013.01); B81C 1/00031 (2013.01); H01L 21/31155 (2013.01);
Abstract

A method for forming a functionalised guide pattern for the self-assembly of a block copolymer by graphoepitaxy, includes forming a guide pattern made of a first material having a first chemical affinity for the block copolymer, the guide pattern having a cavity with a bottom and side walls; grafting a functionalisation layer made of a second polymeric material having a second chemical affinity for the block copolymer, the functionalisation layer having a first portion grafted onto the bottom of the cavity and a second portion grafted onto the side walls of the cavity; selectively etching the second portion of the functionalisation layer relative to the first portion of the functionalisation layer, the etching including a step of exposure to an ion beam following a direction that intersects the second portion of the functionalisation layer, such that the ion beam does not reach the first portion of the functionalisation layer.


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