The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2020
Filed:
Nov. 16, 2017
Applicant:
Toray Industries, Inc., Tokyo, JP;
Inventors:
Assignee:
TORAY INDUSTRIES, INC., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/86 (2006.01); H01L 51/05 (2006.01); G06K 19/07 (2006.01); H01L 51/00 (2006.01); H01L 51/10 (2006.01);
U.S. Cl.
CPC ...
H01L 51/052 (2013.01); G06K 19/0723 (2013.01); H01L 51/0003 (2013.01); H01L 51/0034 (2013.01); H01L 51/055 (2013.01); H01L 51/0545 (2013.01); H01L 51/105 (2013.01); H01L 51/0558 (2013.01);
Abstract
A field-effect transistor includes: a substrate; a source electrode; a drain electrode; a gate electrode; a semiconductor layer in contact with the source electrode and with the drain electrode; and a gate insulating layer insulating between the semiconductor layer and the gate electrode. The gate insulating layer comprising at least a polysiloxane having a structural unit represented by a general formula (1):