The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2020

Filed:

Aug. 14, 2018
Applicant:

Toshiba Memory Corporation, Minato-ku, Tokyo, JP;

Inventors:

Tomoaki Sawabe, Tokyo, JP;

Tomomasa Ueda, Yokohama Kanagawa, JP;

Keiji Ikeda, Kawasaki Kanagawa, JP;

Tsutomu Tezuka, Yokohama Kanagawa, JP;

Nobuyoshi Saito, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 27/108 (2006.01); H01L 29/778 (2006.01); H01L 21/44 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); H01L 27/10802 (2013.01); H01L 27/10808 (2013.01); H01L 29/42392 (2013.01); H01L 29/4908 (2013.01); H01L 29/513 (2013.01); H01L 29/66969 (2013.01); H01L 29/7788 (2013.01); H01L 29/7869 (2013.01); H01L 29/78642 (2013.01); H01L 21/44 (2013.01); H01L 21/47635 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01); H01L 2029/42388 (2013.01);
Abstract

A semiconductor device of an embodiment includes a first electrode; a second electrode; an oxide semiconductor layer provided between the first electrode and the second electrode and extending in a first direction; a gate electrode surrounding the oxide semiconductor layer; and a first gate insulating layer provided between the gate electrode and the oxide semiconductor layer, the first gate insulating layer surrounding the oxide semiconductor layer, and the first gate insulating layer having a length in the first direction shorter than a length of the oxide semiconductor layer in the first direction.


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