The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2020
Filed:
Apr. 25, 2018
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Yao-Wen Chang, Taipei, TW;
Gung-Pei Chang, Taipei, TW;
Ching-Sheng Chu, Hsinchu County, TW;
Chern-Yow Hsu, Hsin-Chu County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/26 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 29/26 (2013.01); H01L 21/0228 (2013.01); H01L 21/02172 (2013.01); H01L 21/02304 (2013.01); H01L 21/76816 (2013.01); H01L 21/76831 (2013.01); H01L 21/76871 (2013.01); H01L 21/76889 (2013.01);
Abstract
The present disclosure provides a semiconductor structure, including providing a metal layer, an adhesion-enhancing layer over the metal layer, a dielectric stack over the adhesion-enhancing layer, a contact penetrating the dielectric stack and the adhesion-enhancing layer and connecting with the metal layer, a barrier layer disposed between the contact and the dielectric stack, and a high-k dielectric layer disposed between the contact and the barrier layer.