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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10790308 B1

PDFFull Text
Date of Patent:
Sep. 29, 2020

Filed:

Sep. 14, 2018

Field-effect transistor, display element, image display device, and system

Applicants:

Naoyuki Ueda, Kanagawa, JP;

Yuki Nakamura, Tokyo, JP;

Yukiko Abe, Kanagawa, JP;

Shinji Matsumoto, Kanagawa, JP;

Yuji Sone, Kanagawa, JP;

Ryoichi Saotome, Kanagawa, JP;

Sadanori Arae, Kanagawa, JP;

Minehide Kusayanagi, Kanagawa, JP;

Inventors:

Naoyuki Ueda, Kanagawa, JP;

Yuki Nakamura, Tokyo, JP;

Yukiko Abe, Kanagawa, JP;

Shinji Matsumoto, Kanagawa, JP;

Yuji Sone, Kanagawa, JP;

Ryoichi Saotome, Kanagawa, JP;

Sadanori Arae, Kanagawa, JP;

Minehide Kusayanagi, Kanagawa, JP;

Assignee:

Ricoh Company, Ltd., Tokyo, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Long K Tran

Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/786 (2006.01); H05B 33/14 (2006.01); H05B 33/02 (2006.01); G09F 9/30 (2006.01); H01L 27/32 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); G02F 1/15 (2019.01);
U.S. Cl.
CPC ...
H01L 27/1225 (2013.01); G09F 9/30 (2013.01); H01L 27/124 (2013.01); H01L 27/1229 (2013.01); H01L 27/3276 (2013.01); H01L 29/41733 (2013.01); H01L 29/42384 (2013.01); H01L 29/7869 (2013.01); H01L 29/78687 (2013.01); H01L 29/78696 (2013.01); H05B 33/02 (2013.01); H05B 33/14 (2013.01); G02F 1/1368 (2013.01); G02F 1/136286 (2013.01); G02F 1/15 (2013.01);
Abstract

A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to transfer an electrical signal; an active layer, which is formed between the source electrode and the drain electrode; and a gate insulating layer, which is formed between the gate electrode and the active layer, the active layer including at least two kinds of oxide layers including layer A and layer B, and the active layer satisfying at least one of condition (1) and condition (2) below:

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