The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2020
Filed:
Jan. 05, 2015
Applied Materials, Inc., Santa Clara, CA (US);
Brian Saxton Underwood, Santa Clara, CA (US);
Abhijit Basu Mallick, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A silicon and oxygen-containing film, such as a silicon dioxide film, is deposited in the absence of an oxidizer by introducing siloxane precursors into a plasma processing chamber and dissociating at least some of the Si—H bonds of the siloxane precursors by, for example, exposing the siloxane precursors to a low energy plasma. The silicon and oxygen-containing film may be formed on an oxidation-prone surface without oxidizing the oxidation-prone surface. The deposited silicon and oxygen-containing film may serve as an initiation layer for a silicon dioxide bulk layer that is formed on top of the initiation layer using conventional silicon oxide deposition techniques, such as exposing the siloxane precursors to an oxygen-containing plasma. The initiation layer may be post-treated or cured to reduce the concentration of Si—H bonds prior to or after the deposition of the bulk layer.