The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2020

Filed:

Aug. 27, 2019
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Chung-Kuang Chen, Hsinchu, TW;

Han-Sung Chen, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/12 (2006.01); G11C 11/4091 (2006.01); G11C 7/10 (2006.01); G11C 11/4074 (2006.01); G11C 11/4094 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4091 (2013.01); G11C 7/1048 (2013.01); G11C 11/4074 (2013.01); G11C 11/4094 (2013.01);
Abstract

A memory device comprises a memory cell array, a plurality of sense amplifiers and a memory controller for controlling the plurality of sense amplifiers. The memory cell array includes a plurality of bit lines, where a bit line is coupled to a plurality of memory cells. A sense amplifier is coupled to a bit line and provides a sensing current to access data from one or more memory cells of the plurality of memory cells corresponding to the bit line. The memory controller performs operations comprising: during a pre-charging stage of a memory access cycle, providing, to a particular sense amplifier, a first voltage; and during a sensing stage of the memory access cycle, providing, to the particular sense amplifier, a second voltage, where the second voltage is a non-zero voltage that is lower than the first voltage.


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